(1) depends on package bipolarics, inc. part number brf630 features: high gain bandwidth product f t = 12 ghz typ @ i c = 30ma low noise figure 1.4 db typ at 1.0 ghz 1.7 db typ at 2.0 ghz high gain |s 21 | 2 = 16.9 db @ 1.0 ghz 12.0 db @ 2.0 ghz dice, plastic, hermetic and surface mount packages available performance d ata: electrical characteristics (t a = 25 o c) product data sheet npn low noise silicon microwave transistor symbol parameters & conditions unit min. typ. max. f t gain bandwidth product ghz 12.0 v ce = 8v, i c = 25 ma unless stated v ce = 8v, i c =10 ma c cb collector base capacitance: v cb = 8v f = 1mhz pf 0.25 (1) absolute maximum ratings: v ceo collector-emitter voltage 7 v v ebo emitter-base voltage 1.5 v i c collector current 60 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c v cbo collector-base voltage 7 v symbol parameters rating units |s 21 | 2 insertion power gain: f = 1.0 ghz db 16.9 f = 2.0 ghz db 12.0 p 1d b power output at 1db compression: f = 1.0 ghz dbm 18.0 g 1d b gain at 1db compression: f = 1.0 ghz dbm 15.0 nf noise figure: v ce = 8v, i c = 10ma f = 1.0 ghz db 1.4 h fe forward current transfer ratio: f = 1mhz 30 150 300 i cbo collector cutoff current : v cb = 8v a 0.2 i ebo emitter cutoff current : v eb = 1v a 1.0 description and applications: bipolarics' brf630 is a high performance silicon bipolar transistor intended for use in low noise applications at vhf, uhf and microwave frequencies. these applications include narrowband and wideband amplifiers, oscillators and micropower transmitters. typical applications include cellu- lar telephone preamplifiers/mixers, catv amplifiers and part 15 receivers and transmitters. commercial plastic, sur- face mount and hermetic (including stripline) packaging options make this device very versatile; from consumer prod- uct to space flight.
npn low noise silicon microwave transistor page 2 0.02 .51 0.008+0.002 0.203+0.051 0.032+0.015 2.34+0.38 .020+.010 0.51+.25 0.106+0.015 2.67+0.38 0.026+0.001 0.66+0.13 0.085+0.005 2.16+0.13 0.060+0.01 1.52+0.25 1 2 3 4 .020 .51 5 .065 2.15 .008+.002 .20+.050 1 2 3 4 .215+.010 5.46+.25 .020 .51 .60+0.10 1.52+.26 bipolarics, inc. part number brf630 brf630 87 package style 87 : 0. 0 85 " plastic micro-x, short lead brf63 85 packagestyle 85 : 0.0 85 " plastic micro-x package style 01 : 0. 145 " plastic macro-x brf630 04 brf630 86 package style 86 : 0.0 85 " plastic micro-x, surface mount
npn low noise silicon microwave transistor page 3 bipolarics, inc. part number brf630 brf630 9 2 package style 9 2: to-92 brf630 14 package style 14 : sot-143 packagestyle 02 j: sot-23j brf630 02 j brf630 02 packagestyle 02 : sot-23 0.30 0.51 1.39 1.57 2.25 2.75 0.45 0.60 0.95 2.65 3.04 0.00 0.10 0.45 0.60 0.10 0.79 1.1 1.90
bipolarics, inc. part number brf630 npn low noise silicon microwave transistor lead 1 2 3 4 package style base emitter collector emitter 14 , 85 , 3 5 & 04 page 4 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice (mm) brf630 3 5 package style 3 5: micro-x 0. 0 85 " ceramic bipolarics, inc. 46 766 lak ev iew b lv d. f rem ont , ca 94 53 8 phone: (510)226-6565 fax: (510) 226-6765
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